Material development for renewable energy & power conversion systems

Renewable Energy Material Engineering (REME) Section is dedicated to material development for renewable energy and power conversion systems. III-Nitride semiconductors, such as AlN, GaN, InN and their alloys, are candidate materials for those systems according to their superior material properties. Our section is supporting the device-grade material development from both theoretical and experimental viewpoints.

1) Development of ab initio-based approach: prediction of surface phase diagram,
2) Investigation of impurity incorporation mechanism during semiconductor epitaxy (process informatics),
3) Development of solid source solution growth (3SG) technique for AlN bulk growth.