Material development for renewable energy & power conversion systems
Renewable Energy Material Engineering (REME) Section is dedicated to material
development for renewable energy and power conversion systems. III-Nitride
semiconductors, such as AlN, GaN, InN and their alloys, are candidate materials
for those systems according to their superior material properties. Our
section is supporting the device-grade material development from both theoretical
and experimental viewpoints.
1) Development of ab initio-based approach: prediction of surface phase
diagram,
2) Investigation of impurity incorporation mechanism during semiconductor
epitaxy (process informatics),
3) Development of solid source solution growth (3SG) technique for AlN
bulk growth.
