A few papers will be selected for the “Paper Award” for young researcher. Around 10 papers will be nominated for the award based on the program committee’s ratings of the abstracts. The paper award will be judged from their presentations and announced at the closing to be held on the last day.

Student’s Paper Award, “Yamaguchi Masahito Award”
Yamaguchi Masahito, Ph. D, Associate Professor, Nagoya University, Steering Committee Member of LEDIA’13. He passed away in July, 2013, at the age of 45. We inherited his will to educate students and established Student’s Paper Award with the financial aid of MUTSUMI CORPORATION.

Successive award winner

  • LEDIA’19
    Young Researcher’s Paper Award
    Kenjiro Uesugi, Mie University (Japan)
    Threading Dislocation Reduction of Sputter-Deposited AlN Templates for Deep-Ultraviolet Light-Emitting Device Applications
    Co-authors: Y. Hayashi, K. Shojiki, H. Miyake , Mie Univ., Japan
  • Student’s Paper Award, “Yamaguchi Masahito Award”
    Yoshinobu Matsuda, Kyoto University (Japan)
    Exploring the Growth Procedures for Polar-Plane-Free Faceted InGaN-LED Structures
    Co-authors: M. Funato, Y. Kawakami, Kyoto Univ., Japan
  • Asahi Yamauchi, Osaka University (Japan)
    Fabrication of Transverse Quasi-Phase-Matched Polarity-Inverted Stacked AlN Waveguide by Surface-Activated Bonding and Silicon Removal
    Co-authors: S. Yamaguchi1, T. Onodera1, Y. Hayashi2, H. Miyake2, K. Shiomi1, Y. Fujiwara1, T. Hikosaka3, S. Nunoue3, M. Uemukai1, R. Katayama1
    1 Osaka Univ., Japan
    2 Mie Univ. Japan
    3 Toshiba Corp. Japan
  • Chun-Sheng Wu, National Cheng Kung University (Taiwan)
    Optically Pumped Single-Mode Lasing Action in Cesium Lead Halide Perovskite Individual Microspheres
    Co-authors: B.-L. Jian, H.-C. Hsu, National Cheng Kung Univ., Taiwan
  • LEDIA’18
    Young Researcher’s Paper Award
    Johannes Glaab, Ferdinand-Braun-Institut (Germany)
    Degradation of electro-optical parameters and electromigration of hydrogen in (In)AlGaN-based UVB LEDs
    Co-authors: J. Ruschel1, T. Kolbe1, A. Knauer1, J. Rass1, N. L. Ploch1, M. Weyers1, M. Kneissl1,2, S. Einfeldt1
    1Ferdinand-Braun-Institut, Germany,
    2Technische Univ. Berlin, Germany
  • Student’s Paper Award, “Yamaguchi Masahito Award”
    Yuya Inatomi, Kyushu University (Japan)
    Formation mechanism of singular structure in AlInN layer grown on m-GaN substrate by MOVPE
    Co-authors: A. Kusaba1, Y. Kangawa1,2,3, K. Kojima4, S. F. Chichibu4,3
    1Dept. Aeronautics and Astronautics, Kyushu Univ., Japan
    2RIAM, Kyushu Univ., Japan
    3IMaSS, Nagoya Univ., Japan
    4IMRAM, Tohoku Univ., Japan
  • So Kusumoto, Osaka University (Japan)
    GaAsP Tunable Single-Mode Semiconductor Laser using Periodically Slotted Structure with Simplified Fabrication Process
    Co-authors: M. Uemukai, R. Katayama Osaka Univ., Japan
  • LEDIA’17
    Young Researcher’s Paper Award
    Narihito Okada, Yamaguchi University (Japan)
    Fabrication of idiosyncratic GaN structures by ICP-RIE with enhanced chemical etching conditions and its applications
    Co-authors: K. Nojima1, N. Ishibashi1, K. Nagatoshi1, N. Itagaki1, R. Inomoto1, S. Motoyama2, T. Kobayashi2, K. Tadatomo1
    1Yamaguchi Univ., Japan,
    2SAMCO Inc., Japan
  • Student’s Paper Award, “Yamaguchi Masahito Award”
    Marcus Muller, Otto-von-Guericke-University Magdeburg (Germany)
    Nano-scale correlation of the optical, structural, and compositional properties of InGaN/GaN core-shell nanorod LEDs
    Co-authors: S. Metzner1, P. Veit1, F. Krause2, F. Bertram1, T. Schimpke3, A. Avramescu3, M. Strassburg3, A. Rosenaer2, J. Christen1
    1Otto-von-Guericke-Univ. Magdeburg, Germany
    2Univ. Bremen, Germany
    3OSRAM Opto Semiconductors GmbH, Germany
  • Naoki Takeda, Osaka University (Japan)
    Effect of gaseous carbon addition in GaN crystal growth by Na-flux method
    Co-authors: M. Imanishi, K. Murakami, M. Hayashi, M. Imade, M. Yoshimura, Y. Mori
    Osaka Univ., Japan
  • LEDIA’16
    Young Researcher’s Paper Award
    S.-Y. Bae, Nagoya University (Japan)
    Controlled Growth of Highly Elongated GaN Nanorod Arrays on AlN/Si Templates by Pulsed-Mode Metalorganic Vapor Deposition
    Co-authors: K. Lekhal1,2, B. O. Jung1, D.-S. Lee3, M. Deki2, Y. Honda2, H. Amano2,4
    1Dept. of Electrical Eng. and Computer Sci., Nagoya University, Japan
    2Inst. of Materials and Systems for Sustainability, Nagoya University, Japan
    3Gwangju Inst. of Sci. and Tech., Korea, 4Akasaki Research Center, Nagoya Univ., Japan
  • C. Reich, Technical Univ. Berlin (Germany)
    Strongly TE-Polarized Emission from Deep UV AlGaN Quantum Well LEDs
    Co-authors: M. Feneberg2, M. Guttmann1, T. Wernicke1, F. Mehnke1, M. Kneissl1
    1Technical Univ. Berlin, Germany
    2Otto-von-Guericke-Univ. Magdeburg, Germany
  • Student’s Paper Award, “Yamaguchi Masahito Award”
    K. Matsui, Meijo University (Japan)
    GaN-based VCSELs using Periodic Gain Structures
    Co-authors: K. Ikeyama1, T. Furuta1, Y. Kozuka1, T. Akagi1, T. Takeuchi1, S. Kamiyama1, M. Iwaya1, I. Akasaki1,2
    1Meijo Univ., Japan
    2Akasaki Research Center, Nagoya Univ., Japan
  • S. Stanczyk, Institute of High Pressure Physics, PAS (Poland)
    Opto-electrical Properties of Tapered (Al,In)GaN Laser Diodes
    Co-authors: A. Kafar1, A. Nowakowska-Siwinska2, I. Makarowa2, M. Sarzynski1,2, J. Walczak3, R. Sarzala3, T. Suski1, P. Perlin1,2
    1IHPP, PAS, Poland
    2TopGaN Ltd., Poland, 3Inst. of Physics, Lodz Univ. of Tech., Poland
  • LEDIA’15
    Young Researcher’s Paper Award
    Tomasz Sochacki, Institute of High Pressure Physics, PAS (Poland)
    State of the Art of Hydride Vapor Phase Epitaxy on Ammonothermally Grown GaN Seeds
    Co-authors: M. Amilusik1,2, M. Fijalkowski1, B. Lucznik1,2, M. Iwinska1, G. Kamler1, R. Kucharski3, I. Grzegory1, M. Bockowski1,2
    1IHPP, PAS, Poland
    2TopGaN Sp. z o.o., Poland, 3Ammono, Poland
  • Student’s Paper Award, “Yamaguchi Masahito Award”
    Malgorzata Iwinska, Institute of High Pressure Physics, PAS (Poland)
    HVPE-GaN Growth on GaN-Based Advanced Substrate by Smart CutTM
    Co-authors: M. Amilusik1,2, M. Fijalkowski1, T. Sochacki1,2, B. Lucznik1,2, P. Guenard3, R. Caulmilone3, A. Nowakowska-Siwinska2, I. Grzegory1, M. Bockowski1,2
    1IHPP, PAS, Poland
    2TopGaN Sp. z o.o., Poland
    3Soitec, France
  • Kanako Shojiki, Tohoku University (Japan)
    Influence of V/III Ratio and Layer Thicknesses on MOVPE-Grown N-Polar (000-1) InGaN Multiple Quantum Wells
    Co-authors: J. H. Choi1, T. Tanikawa1,2, S. Kuboya1, T. Hanada1,2, R. Katayama1, T. Matsuoka1,2
    1Tohoku Univ., Japan
    2CREST, JST, Japan
  • LEDIA’14
    Young Researcher’s Paper Award
    Ryan G. Banal, NTT Corporation (Japan)
    Nonpolar M-Plane AlGaN Deep-UV LEDs
    Co-authors: Y. Taniyasu, H. Yamamoto
    NTT Corp., Japan
  • Tomoyuki Tanikawa, Tohoku University (Japan)
    Realization of p-Type Conduction in Mg-Doped N-Polar (000-1) GaN Grown by Metalorganic Vapor Phase Epitaxy
    Co-authors: J. H. Choi1,2, K. Shojiki1, S. Kuboya1, R. Katayama1,2, T. Matsuoka1,2
    1Tohoku Univ., Japan
    2CREST, JST, Japan
  • Student’s Paper Award, “Yamaguchi Masahito Award”
    Anna Kafar, Institute of High Pressure Physics, PAS (Poland)
    Optimization of InGaN Superluminescent Diodes: State of the Art Devices and an Analysis of Their Limiting Factors
    Co-authors: S. Stanczyk1, G. Targowski2,3, P. Wisniewski1, T. Suski1, U.T. Schwarz4, P. Perlin1
    1IHPP, PAS, Poland
    2TopGAN Sp. Z o.o, Polnad
    3Fraunhofer Institute for Applied Solid State Physics IAF, Germany
    4Freiburg Univ., Germany
  • Tadashi Mitsunari, Nagoya University (Japan)
    Growth Optimization of Green InGaN Multi-Quantum Well on Bulk GaN Substrate by In Situ Monitoring System
    Co-authors: A. Tamura1, S. Usami1, M. Kushimoto1, K. Yamashita1, Y. Honda1, Y. Lacronix3, H. Amano1,2
    1Nagoya Univ., Japan
    2Akasaki Research Center, Nagoya Univ., Japan
    3YSystems Ltd., Japan