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窒化物半導体発光デバイス開発に関する国際セミナー
| 日 時 | 2018 年 1 月 15 日（月） 10 時 30 分 ～ （１時間程度） |
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| 場 所 | 九州大学応用力学研究所 西棟6階 多目的研究交流室（W601 号室） * アクセス案内はこちら |
| 題 目 | Determination of the properties of the nitride laser diodes and light-emitting diodes by simulation based on the drift-diffusion model with the Discontinuous Galerkin Method |
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| 講演者 | Dr. Konrad Sakowski (Institute of High Pressure Physics) |
| Abstract |
The basic elements of semiconductor laser diodes and light-emitting diodes based on group III nitrides will be presented, and fundamental physical phenomena governing operation of these devices will be introduced. Effects determining their efficiency will be discussed.
The drift-diffusion equations will be derived from conservation laws and Maxwell equations. Van Roosbroeck system will be introduced. Examples of extending of this system to introduce various recombination models will be shown. Discretization of the van Roosbroeck equations in one- and two-dimensional domains will be introduced. Finite Element Method discretization of weak formulation of these equations will be presented. Discontinuous Galerkin Method will be used to find approximate solutions. Two variants of this method will be discussed: Composite Weakly Over-Penalized Symmetric Interior Penalty (CWOPSIP) and Composite Symmetric Interior Penalty Galerkin (CSIPG). Convergence analysis will be presented for one- and two-dimensional case. Specific problems related to properties of wide bandgap semiconductors will be discussed, as well as stability of solution methods. Simulation results for GaN-based luminescent devices will be presented and discussed, in particular a p-n diode with tunneling, a light-emitting diode and a laser diode. These results will be compared with data obtained for typical devices. The perspectives of further applications of developed model and the computer application will be briefly discussed. |
